Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher.
Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?
Some links on this page may take you to non-federal websites. Their policies may differ from this site.
-
Free, publicly-accessible full text available October 13, 2026
-
NA (Ed.)Free, publicly-accessible full text available April 14, 2026
-
Free, publicly-accessible full text available July 7, 2026
-
Transparent conductive oxides (TCOs) are gaining increasingly high research interest for integrated photonic devices due to the strong plasma dispersion effect and process compatibility with versatile optoelectronic platforms. In this perspective article, the authors gave a brief review of research efforts both on theoretical modeling and experimental demonstration of integrated photonic devices, especially on high-efficiency electro-optic modulators through the integration with plasmonics and silicon photonics. In addition, the authors discussed the challenge and opportunity associated with TCO photonic devices and the application in photonic integrated circuits (PICs) with emphasis on high mobility materials, high-speed E-O modulators, and large-scale integration. Finally, we conclude that collaboration with existing silicon photonics foundry is a necessary route to incorporate TCOs into existing PIC ecosystems.more » « less
-
Abstract Silicon microring resonators (Si-MRRs) play essential roles in on-chip wavelength division multiplexing (WDM) systems due to their ultra-compact size and low energy consumption. However, the resonant wavelength of Si-MRRs is very sensitive to temperature fluctuations and fabrication process variation. Typically, each Si-MRR in the WDM system requires precise wavelength control by free carrier injection using PIN diodes or thermal heaters that consume high power. This work experimentally demonstrates gate-tuning on-chip WDM filters for the first time with large wavelength coverage for the entire channel spacing using a Si-MRR array driven by high mobility titanium-doped indium oxide (ITiO) gates. The integrated Si-MRRs achieve unprecedented wavelength tunability up to 589 pm/V, or VπL of 0.050 V cm with a high-quality factor of 5200. The on-chip WDM filters, which consist of four cascaded ITiO-driven Si-MRRs, can be continuously tuned across the 1543–1548 nm wavelength range by gate biases with near-zero power consumption.more » « less
An official website of the United States government

Full Text Available